Product Description
Silicon Carbide (SiC) heating elements is a non-metal electric heating element made from SiC as its main raw materials. It has some specific properties, such as low expansion coefficient, little deformation, stable chemical property, long service life, easy installation and maintenance, etc.
Silicon Carbide (SiC) heating elements can usually make use for furnace which temperature from 600degree celsius-1600.degree celsius It can be directly used in an air atmosphere without any protection atmosphere. It is extensively used in the fields of metallurgy, ceramics, glass, machinery, analysis test, semiconductor, science & research and so on.
Advantages
Advantages of Silicon Carbide Electric Heating Elements
Economical, dependable, clean, quiet and safe
No fuel availability or storage problems
No noxious fuel exhaust to be ducted away
Efficiently handle a wide range of products and atmospheres
Elements that operate at 600 degree up to1550 degree
One of the highest hot:cold ratios in the industry
Application
Typical Applications of Cermet Heating Elements |
Ceramic Industry |
|
Ferrites |
Dinnerware |
Titanates |
Whiteware |
Steatites |
Pottery |
Electrical porcelain |
Tile |
Refractories |
Spark plugs |
Grinding wheels |
Calcining: powders, ores |
Metallurgical Industry |
|
Assaying |
Deoxidizing |
Heat-treating |
Sintering |
Hardening |
Brazing |
Forging |
Melting and holding |
Annealing |
|
Glass Industry |
|
Melting |
|
Holding |
|
Refining |
|
Electronics Industry |
|
Crystal growing |
|
Diffusion |
|
Product Parameters
Physical Property
Specific Gravity |
2.6~2.8g/cm3 |
Bend Strength |
>300kg |
Hardness |
>9MOH'S |
Tensile Strength |
>150Kg.cm3 |
Porosity Rate |
<30% |
Radiancy |
0.85 |
Chemistry Property
1.Antioxidation Property of Elements
The element start to being oxidized when heat to 800°C in air, and a SiO2 protect film will be generated in surface of hot zone when temperature get to 1000-1300°C ; cristobalite will be crystallized at 1300°C; the protect film get to a certain thickness when the temperature get go 1500°C which make the oxidation speed being very slowly to stable. if continue to heat to over 1627°C ,the protect film will be damaged and oxidation speed will be more rapid evidently and make the element damaged earlier.
Thought the element will be oxidized very slowly in course of application, it also will make the resistance increased following long time application, this phenonenon calls ageing , in order to lower the ageing speed, we use special technology to spread a protect film on the surface of hot zone in the course of production, which enhance the antioxidant property of element evidently and lengthen the service life.
2.The effects of alkali and alkaline metal oxide to elements.
The alkali and alkaline metal oxide will react with SiC at about 1300°C and generate silicate, which calls alkali-chemical corrosion, and can influence the glowing of element.
3.The effects to elements from melting metal
Some metals ,such as cobalt, nickel, chrome and so on, can corrade the element in high temperature melting state and affect the service life of element.
Electric Property
SIC heating elements has rather large specific resistance , when it is heated in air and the surface temperature of the hot zone reaches 1050ºC, it's resistance rate is 600-1400 mm2/mm (square millimetre , its resistance value changes as the temperature rises. From room-temperature to 800ºC is negative value , over 800ºC is positive value nature curve.
Detailed Photos
Company Profile
About Us
1. Our company is a high & new technology enterprise specially engaged in developing, manufacturing and selling SiC (silicon carbide) heating elements and Molybdenum disilicide (Mosi2) heating elements and silicon carbide protective pipes
2. It established in the year 2007, with more than 16 years experience for produciton.
3. Products are exported to USA, Germany, France, Poland, Spain,Turkey, Russia, Ukraine, Japan, Korea, Singapore, Vietnam, Thailand and Iran, etc.. They are highly approved by our customers all over the world.